Research Output
High-Gain On-Chip Antenna Design on Silicon Layer With Aperture Excitation for Terahertz Applications
  This article investigates the feasibility of designing a high-gain on-chip antenna on silicon technology for sub-terahertz applications over a wide frequency range. High-gain is achieved by exciting the antenna using an aperture fed mechanism to couple electromagnetics energy from a metal slot-line, which is sandwiched between the silicon and polycarbonate substrates, to a 15-element array comprising circular and rectangular radiation patches fabricated on the top surface of the polycarbonate layer. An open ended microstrip line, which is orthogonal to the metal slot-line, is implemented on the underside of the silicon substrate. When the open ended microstrip line is excited it couples the signal to the metal slot-line which is subsequently coupled and radiated by the patch array. Measured results show the proposed on-chip antenna exhibits a reflection coefficient of less than -10 dB across 0.290 THz to 0.316 THz with a highest gain and radiation efficiency of 11.71 dBi and 70.8%, respectively, occurred at 0.3THz. The antenna has a narrow stopband between 0.292 THz to 0.294 THz. The physical size of the presented sub-terahertz on-chip antenna is 20×3.5×0.126mm3

  • Type:

    Article

  • Date:

    21 July 2020

  • Publication Status:

    Published

  • Publisher

    Institute of Electrical and Electronics Engineers (IEEE)

  • DOI:

    10.1109/LAWP.2020.3010865

  • ISSN:

    1536-1225

  • Funders:

    Engineering and Physical Sciences Research Council; New Funder

Citation

Alibakhshikenari, M., Virdee, B. S., Khalily, M., See, C. H., Abd-Alhameed, R., Falcone, F., …Limiti, E. (2020). High-Gain On-Chip Antenna Design on Silicon Layer With Aperture Excitation for Terahertz Applications. IEEE Antennas and Wireless Propagation Letters, 19(9), 1576-1580. https://doi.org/10.1109/LAWP.2020.3010865

Authors

Keywords

Terahertz (THz) On-chip antenna, coupling feeding mechanism, terahertz applications, high gain, silicon technology, wide frequency range

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