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Electron transport in metal-amorphous silicon-metal memory devices.

Journal Article

Hu, J., Hajto, J., Snell, A. J., & Rose, M. J. (2001)

Electron transport in metal-amorphous silicon-metal memory devices. IEICE Transactions on Electronics, E84-C, 1197-1201

Current-voltage characteristics of Cr-doped hydrogenated amorphous silicon-V (Cr/p+a-Si:H/V) analogue memory switching devices have been measured over a wide range of device r...

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