Research Output
Electron transport in metal-amorphous silicon-metal memory devices.
  Current-voltage characteristics of Cr-doped hydrogenated amorphous silicon-V (Cr/p+a-Si:H/V) analogue memory switching devices have been measured over a wide range of device resistance from several kilo-ohms to several hundred kilo-ohms, and over a temperature range from 13 K to 300 K. Both the bias and temperature dependence of the conductance show similar characteristics to that of metal-insulator heterogeneous materials (i.e. discontinuous or granular metallic films), which are analysed in terms of activated tunnelling mechanism. A modified filamentary structure for the Cr/p+a-Si:H/V switching devices is proposed. The influence of embedded metallic particles on memory switching is analysed and discussed.

  • Type:

    Article

  • Date:

    01 September 2001

  • Publication Status:

    Published

  • ISSN:

    0916-8524

  • Library of Congress:

    TK Electrical engineering. Electronics Nuclear engineering

  • Dewey Decimal Classification:

    621 Electronic & mechanical engineering

Citation

Hu, J., Hajto, J., Snell, A. J., & Rose, M. J. (2001). Electron transport in metal-amorphous silicon-metal memory devices. IEICE Transactions on Electronics, E84-C, 1197-1201

Authors

Keywords

Amorphous semiconductors; Elemental semiconductors; Metal-semiconductor-metal structures; Semiconductor storage; Semiconductor switches; Silicon; Tunnelling; Memory switching devices;

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