Edinburgh Napier University

  In this paper, a high-performance antenna-on-chip (AoC) is implemented on gallium arsenide (GaAs) wafer based on the substrate integrated waveguide (SIW) and metasurface (MTS) technologies for terahertz band applications. The proposed antenna is constructed using five stacked layers comprising metal-GaAs-metal-GaAs-metal. The conductive electromagnetic radiators are implemented on the upper side of the top GaAs layer, which has a metallic ground-plane at its underside. The metallic feedline is implemented at the underside of the bottom GaAs layer. Dual wrench-shaped radiators are framed by metallic vias connected to the ground-plane to create SIW cavity. This technique mitigates the surface waves and the substrate losses, thereby improving the antenna’s radiation characteristics. The antenna is excited by a T-shaped feedline implemented on the underside of the bottom GaAs substrate layer. Electromagnetic (EM) energy from the feedline is coupled to the radiating elements through the circular and linear slots etched in the middle ground-plane layer. To mitigate the surface-wave interactions and the substrate losses in the bottom GaAs layer, the feedline is contained inside a SIW cavity. To enhance the antenna’s performance, the radiators are transformed into a metamaterial-inspired surface (i.e., metasurface), by engraving periodic arrangement of circular slots of sub-wavelength diameter and periodicity. Essentially, the slots act as resonant scatterers, which control the EM response of the surface. The antenna of dimensions of 400 × 400 × 8 μm3 is demonstrated to operate over a wide frequency range from 0.445 to 0.470 THz having a bandwidth of 25 GHz with an average return-loss of − 27 dB. The measured average gain and radiation efficiency are 4.6 dBi and 74%, respectively. These results make the proposed antenna suitable for AoC terahertz applications.